? semiconductor components industries, llc, 2004 november, 2004 ? rev. 7 1 publication order number: mjd2955/d mjd2955 (pnp) mjd3055 (npn) complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? pb?free packages are available ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a?1o suffix) ? lead formed version available in 16 mm tape and reel (at4o suffix) ? electrically similar to mje2955 and mje3055 ? dc current gain specified to 10 amperes ? high current gain?bandwidth product ? f t = 2.0 mhz (min) @ i c = 500 madc ? epoxy meets ul 94, v?0 @ 0.125 in. ? esd ratings: human body model, 3b 8000 v machine model, c 400 v maximum ratings rating symbol max unit collector?emitter voltage v ceo 60 vdc collector?base voltage v cb 70 vdc emitter?base voltage v eb 5 vdc collector current i c 10 adc base current i b 6 adc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation* @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ?55 to + 150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w thermal resistance, junction?to?ambient* r ja 71.4 c/w 2safe area curves are indicated by figure 1. both limits are applicable and must be observed. *these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 10 amperes 60 volts 20 watts dpak?3 case 369d style 1 dpak case 369c style 1 marking diagrams y = year ww = work week xx = 29 or 30 1 2 3 4 yww j xx55 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information 1 2 3 4 yww j xx55 http://onsemi.com
mjd2955 (pnp) mjd3055 (npn) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) ???? ? ?? ? ???? v ceo(sus) ??? ? ? ? ??? 60 ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ??????????????????????? ??????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) ???? ???? i ceo ??? ??? - ???? ???? 50 ??? ??? adc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 70 vdc, v eb(off) = 1.5 vdc) (v ce = 70 vdc, v eb(off) = 1.5 vdc, t c = 150 c) ???? ? ?? ? ? ?? ? ???? i cex ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 0.02 2 ??? ? ? ? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v cb = 70 vdc, i e = 0) (v cb = 70 vdc, i e = 0, t c = 150 c) ???? ? ?? ? ???? i cbo ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 0.02 2 ??? ? ? ? ??? madc ??????????????????????? ??????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ???? ???? i ebo ??? ??? - ???? ???? 0.5 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? dc current gain (note 1) (i c = 4 adc, v ce = 4 vdc) (i c = 10 adc, v ce = 4 vdc) ???? ? ?? ? ? ?? ? ???? h fe ??? ? ? ? ? ? ? ??? 20 5 ???? ? ?? ? ? ?? ? ???? 100 ? ??? ? ? ? ? ? ? ??? ? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector?emitter saturation voltage (note 1) (i c = 4 adc, i b = 0.4 adc) (i c = 10 adc, i b = 3.3 adc) ???? ? ?? ? ???? v ce(sat) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 1.1 8 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? base?emitter on voltage (note 1) (i c = 4 adc, v ce = 4 vdc) ???? ? ?? ? ???? v be(on) ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? current?gain ? bandwidth product (i c = 500 madc, v ce = 10 vdc, f = 500 khz) ???? ? ?? ? ???? f t ??? ? ? ? ??? 2 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz 1. pulse test: pulse width 300 s, duty cycle 2%. ordering information device package type package shipping 2 mjd2955 dpak 369c 75 units / rail mjd2955g dpak (pb?free) 369c 75 units / rail mjd2955?001 dpak?3 369d 75 units / rail mjd2955t4 dpak 369c 2500 tape & reel mjd2955t4g dpak (pb?free) 369c 2500 tape & reel mjd3055 dpak 369c 75 units / rail mjd3055t4 dpak 369c 2500 tape & reel mjd3055t4g dpak (pb?free) 369c 2500 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mjd2955 (pnp) mjd3055 (npn) http://onsemi.com 3 v, voltage (volts) t, time (s) m 5 3 2 1 0.5 0.3 0.7 0.2 500 300 200 100 30 20 50 i c , collector current (amp) 2 0.5 0.3 i c , collector current (amp) 0.2 figure 1. power derating figure 2. dc current gain 0.01 0.02 0.05 1 10 25 0.1 figure 3. turn?on time figure 4. aono voltages, mjd3055 t j = 25 c t r t j = 150 c -55 c 25 c 1 0.7 0.2 i c , collector current (amp) 0.2 1 6 0.6 2 0.06 0.4 4 i c , collector current (amp) 0.1 0.2 0.3 1 10 25 0.5 3 figure 5. turn?off time h fe , dc current gain v ce = 2 v 10 5 0.5 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t c t a surface mount t s 1.4 0.8 0.6 0 1.2 1 0.4 0.2 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c v cc = 30 v i c /i b = 10 0.05 0.03 0.02 0.1 0.07 v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 2 v 0.1 0.05 0.07 0.1 t d @ v be(off) 5 v 0.2 1 6 0.6 2 0.06 0.4 4 0.1 t, time (s) m t f typical characteristics
mjd2955 (pnp) mjd3055 (npn) http://onsemi.com 4 figure 6. aono voltages, mjd2955 2 0.1 0 0.2 0.3 0.5 1 3 10 0.8 1.6 1.2 v, voltage (volts) 0.4 5 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 3 v figure 7. switching time test circuit figure 8. thermal response t, time (ms) 1 0.01 0.02 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1 2 5 10 20 50 100 200 500 r jc(t) = r(t) r jc r jc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.1 0.5 0.2 resistance (normalized) 1 k 0.5 0.3 0.07 0.03 0.03 0.3 3 30 300 i c , collector current (amp) 2 +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 d 1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma r b and r c varied to obtain desired current levels 0.01 figure 9. maximum forward bias safe operating area 0.01 v ce , collector-emitter voltage (volts) 0.02 5 2 1 10 0.5 0.1 t j = 150 c 1ms dc 3 0.3 0.6 1 2 60 20 40 i c , collector current (amp) wire bond limit thermal limit t c = 25 c (d = 0.1) second breakdown limit 10 6 4 500 s 0.03 0.05 100 s 5ms forward bias safe operating area information there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 9 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 8. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd2955 (pnp) mjd3055 (npn) http://onsemi.com 5 package dimensions dpak case 369c?01 issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. base 2. collector 3. emitter 4. collector
mjd2955 (pnp) mjd3055 (npn) http://onsemi.com 6 package dimensions dpak?3 case 369d?01 issue b 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mjd2955/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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